Extremely Stable Current Emission of P‐Doped SiC Flexible Field Emitters

Extremely Stable Current Emission of P‐Doped SiC Flexible Field Emitters

Novel P-doped SiC flexible field emitters are developed on carbon fabric substrates, having both low Eto of 1.03-0.73 Vμm-1 up to high temperatures of 673 K, and extremely high current emission stability when subjected to different bending states, bending circle times as well as high temperatures (current emission fluctuations are typically in the range ±2.1%-3.4%).

Flexible Devices: Extremely Stable Current Emission of P‐Doped SiC Flexible Field Emitters (Adv. Sci. 1/2016)

Divacancy in 3C- and 4H-SiC: An extremely stable defect

Rights: © 2002 American Physical Society (APS). This is the accepted version of the following article: Torpo, L. & Staab, T. E. M. & Nieminen, Risto M. 2002. Divacancy in 3Cand 4H-SiC : An extremely stable defect. Physical Review B. Volume 65, Issue 8. 085202/1-10. ISSN 1550-235X (electronic). DOI: 10.1103/physrevb.65.085202, which has been published in final form at http://journals.aps.org/prb...

Field Emission: High Performance Field Emitters (Adv. Sci. 5/2016)

Field Emission from Lateral Multiwalled Carbon Nanotube Yarn Emitters

A field emission from a lateral emitter made by a multiwalled carbon nanotube (MWCNT) yarn was investigated. The lateral emitter showed an excellent field emission performance with a low turn-on electric field of 1.13 V/μm at an emission current of 1 μA, high emission current of 0.2 mA at an applied voltage of 700 V, and longtime emission stability for over 20 h without any significant current ...